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SIC MOSFET

Compared with traditional silicon devices, silicon carbide (SiC) devices are low-loss semiconductors due to their low on-resistance characteristics and excellent performance at high temperature, high frequency and high pressure. In addition, SiC allows designers to reduce the use of components, further reducing design complexity. 
 
The low on-resistance characteristics of SiC components help to significantly reduce the energy consumption of equipment, thus facilitating the design of environmentally friendly products and systems that reduce CO2 emissions.


Application
  • lBoost inverters
  • lServer power supplies
  • lSolar inverters
  • Charger station

Datasheet Download

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Product Specifications 
*MP - Mass Production

Voltage

Part No.

Package

VDSS (V)

ID(A)

Rdson_20V(mΩ)

Rdson_18V(mΩ)

Rdson_15V(mΩ)

Vth(V)

Product status

MAX

MAX

TYP

MAX

TYP

MAX

TYP

MAX

MIN

TYP

MAX

1200V

BXW10M1K2H

TO-247

1200

10

320

380

390

460

530

640

2.5

4.5

MP

BXW18M1K2H

TO-247

1200

18

190

228

215

258

295

355

2

4.5

MP

BXW60M1K2J

TO-247-4L

1200

60

36

43

40

48

50

60

1.5

3

MP

1700V

BXW3M1K7H

TO-247

1700

3

1100

1320

1140

1370

1230

1480

2.5

4.5

MP