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JOB SUMMARY
Reporting to the Director of R&D, this position will be responsible
for developing advanced LED structures and growth recipes for high
brightness LEDs. The ideal candidate will utilize their understanding
of GaN MOCVD to improve the internal and external quantum efficiency
of our LEDs.
JOB RESPONSIBILITIES
• Work with other epi growers and device teams to develop
recipes for high performance GaN-based LEDs
• Oversee day to day operation of an MOCVD reactor
• Characterize and analyze materials and device data
• Analyze data and present it to coworkers
JOB REQUIREMENTS
• Ph.D. in Engineering, Physics or Materials Science preferred
• Minimum of 3 years experience with MOCVD growth of GaN-based
compounds
• Deep understanding of epitaxial growth and how materials
effect device properties
• Good understanding of semiconductor materials and devices
• Good data analysis skills
• Ability to communicate effectively with all levels within
the company
• Ability to work in a fast-paced team environment with a
positive attitude
• Understanding of reactor hardware and
• Experience with Thomas Swan reactors preferred
DISCLAIMER
The above information on this description has been designed to indicate
the general nature, and level, of the work performed by this position.
It is not designed to contain, or be interpreted, as a comprehensive
inventory of all duties, responsibilities and qualifications required.
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