R&D Device Engineer

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JOB SUMMARY
Reporting to the R&D process development manager, responsible for the design of new device structures and the development of fabrication process for GaN LED, to achieve world-leading-position of high brightness and low cost.

JOB RESPONSIBILITIES
• Responsibilities will include for designing new device structures and the development of fabrication process for GaN LED.
• Improvement of the existing LED structure on Sapphire by identifying sources of optical loss and by improving current uniformity. Characterize the light extraction efficiency of various processes and epitaxial structures.
• Develop new device structure by introducing new technologies or materials and new substrate material.
• Develop necessary processing steps to realize the new device structure.

JOB REQUIREMENTS
• Ph. D or MS in Electrical Engineering, Material science or Physics.
• At least 5 years of hands-on experience in semiconductor wafer fabrication and optoelectronics devices.
• Strong theoretical understanding of optoelectronics and light extraction. Proven ability to conduct experimental and theoretical studies. Experience in LEDs or VCSELS desirable.
• Thorough understanding of device processes of III-V materials and Si. Experience in CTE mist-matched material system desirable.
• Enthusiasm to work on frontier investigation of new materials and processes.

DISCLAIMER
The above information on this description has been designed to indicate the general nature, and level, of the work performed by this position. It is not designed to contain, or be interpreted, as a comprehensive inventory of all duties, responsibilities and qualifications required.