Epi R&D Scientist

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JOB SUMMARY
This position is part of the epi team for the development of MOCVD epitaxial process for GaN LED products in both R&D and manufacturing environment.

JOB RESPONSIBILITIES
• Develop new InGaN Epitaxial process with focus on a vertical chip device to continuously improve existing products.
• Support 24x7 R&D and production activities.
• Optimize epi process and transfer process improvements into production.
• Coordinate and schedule routine maintenance operations.
• Organize epi level characterization of GaN LED wafers.
• Propose, lead and complete technical projects for yield and quality improvement.

JOB REQUIREMENTS
• MS degree or PhD in Electrical, Material Science, Chemical Engineering or equivalent.
• Solid background in compound semiconductor MOCVD crystal growth & device physics, and material characterizations.
• Experience developing and maintaining MOCVD processes for compound semiconductor devices (laser diode, LED, etc.).
• Familiarity with statistical process control methodologies.
• Experience with MOCVD growth of GaN material system.

DISCLAIMER
The above information on this description has been designed to indicate the general nature, and level, of the work performed by this position. It is not designed to contain, or be interpreted, as a comprehensive inventory of all duties, responsibilities and qualifications required.